Repetitive short circuit capability of SiC MOSFET at specific low gate-source voltage bias for more robust extreme operation
نویسندگان
چکیده
This paper presents short-circuit (SC) performance of a commercial silicon-carbide (SiC) MOSFET device under repetitive SC stress at high drain source voltage. Two protocols are investigated to evaluate the impact gate-source voltage (VGS) depolarization and duration (TSC) reduction. The VGS depolarisation provides power density reduction allows preserve secure failure mode (FTO: Fail To Open) with an increase short circuit TSCmax. results demonstrate that SiC does not reduce cycling capability However, using get close IGBT robustness levels almost 1000 cycles @TSC = 10 μs. simulation chip temperature evolution during tests suggests degradations stay attributed junction (TJ) cycles, which leads fusion top Al inducing cracks into thick oxide.
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ژورنال
عنوان ژورنال: Microelectronics Reliability
سال: 2021
ISSN: ['0026-2714', '1872-941X']
DOI: https://doi.org/10.1016/j.microrel.2021.114253